Thermal Stability of Metal-Silicide Nanocrystal Nonvolatile Memory with Barrier Engineered Tunnel Layers
WSi2 nanocrystal nonvolatile memory devices were fabricated with a silicon oxide-nitride-oxide (SiO2: 2 nm/Si3N4: 2 nm/SiO2: 3 nm) tunnel layer. WSi2 nanocrystals of 2.5 nm diameters and a density of 3.6 × 1012 cm−2 were formed using radio frequency magnetron sputtering and annealing processes. The WSi2 nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 °C. When the writing/erasing voltages were applied at +10 V/−10 V for 500 ms, the memory window of the initial ∼2.6 V decreased by approximately 1.1 V at 25 °C and 0.4 V at 125 °C after 104 sec, respectively. These results show that WSi2 nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.
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Document Type: Research Article
Publication date: 2011-10-01
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