Nanostructure and Internal Strain Distribution in Porous Silicon
Abstract:Porous silicon (PS) layers with different degrees of porosity have been fabricated and their nanostructure has been investigated using complementary methods as FE–SEM (field emission scanning electron microscopy), SAXS (small-angle X-ray scattering), and Raman spectroscopy. Correlation of these results with strain analyses is also required for envisaged applications in MEMS technology. Symmetrical and asymmetrical rocking curves obtained by high-resolution X-ray diffraction completed with reciprocal space maps (RSMs) explain the features observed in Raman spectra: the PS film in-depth contains two layers—bulk and highly strained superficial layer, between them being a graded strain layer.
Document Type: Research Article
Publication date: 2011-10-01
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