Nanostructure and Internal Strain Distribution in Porous Silicon

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Abstract:

Porous silicon (PS) layers with different degrees of porosity have been fabricated and their nanostructure has been investigated using complementary methods as FE–SEM (field emission scanning electron microscopy), SAXS (small-angle X-ray scattering), and Raman spectroscopy. Correlation of these results with strain analyses is also required for envisaged applications in MEMS technology. Symmetrical and asymmetrical rocking curves obtained by high-resolution X-ray diffraction completed with reciprocal space maps (RSMs) explain the features observed in Raman spectra: the PS film in-depth contains two layers—bulk and highly strained superficial layer, between them being a graded strain layer.

Keywords: NANOSTRUCTURED MATERIAL; POROUS SILICON; RAMAN SPECTROSCOPY; STRAIN; TRIPLE-AXIS X-RAY DIFFRACTION

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4305

Publication date: October 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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