Nanostructure and Internal Strain Distribution in Porous Silicon
Porous silicon (PS) layers with different degrees of porosity have been fabricated and their nanostructure has been investigated using complementary methods as FE–SEM (field emission scanning electron microscopy), SAXS (small-angle X-ray scattering), and Raman spectroscopy. Correlation of these results with strain analyses is also required for envisaged applications in MEMS technology. Symmetrical and asymmetrical rocking curves obtained by high-resolution X-ray diffraction completed with reciprocal space maps (RSMs) explain the features observed in Raman spectra: the PS film in-depth contains two layers—bulk and highly strained superficial layer, between them being a graded strain layer.
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Document Type: Research Article
Publication date: 2011-10-01
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