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Preparation of Silicon Nanoparticular Nanocomposite with Thin Interparticular Tin Matrix

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Technology of a composite material of silicon nano-particles (99.999 w% for semiconductors) arranged densely in a metal tin matrix (99.7 w%) is presented in the present paper. The main motivation for the technology development is an endeavor to prepare a nano-composite material in which semiconductor particles are crowded densely by applying high pressure in a metal matrix. In the above arrangement, a coexistence of very narrow mesh nanostructure of a tin matrix with dispersed nanoparicles of silicon is involved. With the high level of volume density of nanoparticles, the surface interface between metal and semiconductor attains an extraordinarily large size. Thanks to this fact, a significant enhancement of the volume rate of the transitional Shottky's zone between metal tin and semiconductive silicon has been reached. Based on preliminary measurements, the abovementioned structure is characterized by an active influence on material behavior in the area of temperature dependence of resistivity which cannot be explained by mere superposition of parallel currents in two independent components: silicon and tin.
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Document Type: Research Article

Publication date: 2011-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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