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Oxidation Behaviour of Ti2 AlN Films Composed Mainly of Nanolaminated MAX Phase

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In this paper, we reported the oxidation behaviour of Ti2AlN films on polycrystalline Al2O3 substrates. The Ti2AlN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti–Al–N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 °C for 1 h. The Ti2AlN films exhibited excellent oxidation resistance and thermal stability at 600–900 °C in air. Very low mass gain was observed. At low temperature (600 °C), no oxide crystals were observed on film surface. Blade-like -Al2O3 fine crystals formed on film surfaces at 700–800 °C. At high temperature (900 °C), firstly -Al2O3 formed on film surface and then transformed into α-Al2O3. At 700–900 °C, a continuous Al2O3 layer formed on Ti2 AlN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2 AlN films was discussed based on the experimental results.


Document Type: Research Article


Publication date: 2011-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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