Oxidation Behaviour of Ti2 AlN Films Composed Mainly of Nanolaminated MAX Phase
Abstract:In this paper, we reported the oxidation behaviour of Ti2AlN films on polycrystalline Al2O3 substrates. The Ti2AlN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti–Al–N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 °C for 1 h. The Ti2AlN films exhibited excellent oxidation resistance and thermal stability at 600–900 °C in air. Very low mass gain was observed. At low temperature (600 °C), no oxide crystals were observed on film surface. Blade-like -Al2O3 fine crystals formed on film surfaces at 700–800 °C. At high temperature (900 °C), firstly -Al2O3 formed on film surface and then transformed into α-Al2O3. At 700–900 °C, a continuous Al2O3 layer formed on Ti2 AlN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2 AlN films was discussed based on the experimental results.
Document Type: Research Article
Publication date: 2011-10-01
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