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Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

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Mathematical models of composed high energy ion beam assisted deposition (IBAD) concentration profiles of implanted component in binary thin films are described. Yields of the backscattered ions and sputtering of the deposited component are considered. A Gaussian probability density is assumed to apply to the ion range distribution. The construction of concentration profiles of various shapes is considered. These profiles should of course be constructed based on continuous changes of the process parameters, but certain technical problems can arise with this continuous parameter changes. Therefore, it has been assumed that the changes to the process parameters are discrete and proceed in several steps. The resulting mathematical models are combinations of error functions. Mathematical models can be used as regression functions for the determination of some parameters, e.g., the sputtering yield. Based on the mathematical model the gradient concentration profile of nitrogen in the SiN x film was experimentally produced by the IBAD method, measured by Rutherford backscattering spectroscopy and compared with the mathematical model.
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Document Type: Research Article

Publication date: 2011-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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