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High Performance of GaN-Based Flip-Chip Light-Emitting Diodes with Hole-Shape Patterned ITO Ohmic Contact Layer and AgIn Reflector

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The enhancement of light extraction efficiency is observed when the hole-shape patterned ITO ohmic contact layer and AgIn reflector is adopted in GaN-based flip-chip (FC) light emitting diodes (LEDs). ITO layer (140 nm) and AgIn (200 nm) was deposited on the top of p-GaN by in-line DC sputtering and electron beam evaporating system, respectively. The ITO ohmic contact layer showed a low specific contact resistance of 2.66 × 10−5 Ωcm−2 and high transmittance of >85% at visible spectral regions. The AgIn reflector exhibited a low specific contact resistance of 1.90 × 10−5 Ωcm−2 and high reflectance of ∼84% at visible spectra1 regions. Comparing with unpatterned ITO/AgIn layer, the optical output power of GaN-based FC LEDs improves approximately 30% by the adoption of micro size hole-shape patterned ITO ohmic contact layer and AgIn reflector.
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Document Type: Research Article

Publication date: 2011-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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