High Performance of GaN-Based Flip-Chip Light-Emitting Diodes with Hole-Shape Patterned ITO Ohmic Contact Layer and AgIn Reflector
Abstract:The enhancement of light extraction efficiency is observed when the hole-shape patterned ITO ohmic contact layer and AgIn reflector is adopted in GaN-based flip-chip (FC) light emitting diodes (LEDs). ITO layer (140 nm) and AgIn (200 nm) was deposited on the top of p-GaN by in-line DC sputtering and electron beam evaporating system, respectively. The ITO ohmic contact layer showed a low specific contact resistance of 2.66 × 10−5 Ωcm−2 and high transmittance of >85% at visible spectral regions. The AgIn reflector exhibited a low specific contact resistance of 1.90 × 10−5 Ωcm−2 and high reflectance of ∼84% at visible spectra1 regions. Comparing with unpatterned ITO/AgIn layer, the optical output power of GaN-based FC LEDs improves approximately 30% by the adoption of micro size hole-shape patterned ITO ohmic contact layer and AgIn reflector.
Document Type: Research Article
Publication date: October 1, 2011
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