Resistive Switching in Copper Oxide Nanorods: A Bottom Up Approach Applicable for Enhanced Scalability
Abstract:Reversible, stable and reproducible resistive switching in a parallel network of Cu2O nanorods, observed in the present study, highlights the advantages of using nanorods in comparison to normally used thin films. Unipolar and symmetric current–voltage characteristics of the metal/insulator/metal structure consisting of Hg top contact/Copper oxide (Cu2O) nanorods/Ag bottom contact in a sandwich configuration shows electroforming at about 11 V, reproducible reset and set points at 0.53 ± 0.03 and 4.2 ± 0.02 V and a high OFF/ON resistance ratio >103. Slope of current–voltage characteristics and current contrast in CAFM mapping indicate that filamentary conduction mechanism is responsible for resistive switching. This study sets the foundation for fabricating a nanorods based resistive random access memory device and thus a manifold increase in the device scalability.
Document Type: Research Article
Publication date: October 1, 2011
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