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MgZnO Nanowires Based Deep Ultraviolet Heterojunction Light Emitting Diodes

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Vertically aligned Mg alloyed ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnace. Structural analysis found that the MgZnO nanowires are with single crystalline without phase separations. The atomic ratio of Mg/O in the nanowire was determined to be ∼15%. Photoluminescence spectra show that the band gap of ZnO nanowire was tuned to ∼3.6 eV due to Mg incorporation. N-type MgZnO nanowires/p-type GaN was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yielded ultraviolet emission peaks, which includes a deep ultraviolet at ∼340 nm. The results suggest that successful Mg alloying in ZnO nanowires was achieved and is promising for deep ultraviolet devices.
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Keywords: ALLOYING; LIGHT EMITTING DIODES; ZNO

Document Type: Research Article

Publication date: 2011-10-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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