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Conformal Atomic Layer Deposition of TA-Based Diffusion Barrier Film Using a Novel Mono-Guanidinate Precursor

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Abstract:

In this work, we present elaboration of Ta-based thin films by ALD from a novel tantalum precursor, the η 2-N, N′-isopropylethylguanidinato-tetra-diethylamino tantalum ([η 2 i PrNC(NEt2)NEt]Ta(NEt2)4, IEGTDEAT). Ammonia was used as reducing agents. The experimental conditions were optimized by quartz microgravimetry, studying the influence of duration of precursors and purge pulses and the substrate temperature. An optimal deposition temperature of 260 °C was showed. Ta-based thin films deposited on planar and patterned substrates showed a perfect conformality and continuity, even at low number of cycles.

Keywords: ALD; ATOMIC LAYER DEPOSITION; GUANIDINATE; QCM; TAN; TANTALUM; TSV

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.5057

Publication date: September 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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