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Atomic Layer Deposition of Ruthenium Films on Strontium Titanate

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Abstract:

Atomic layer deposition of ruthenium on SrTiO3 layers was investigated using (C2H5C5H4) · (NC4H4) Ru and air as precursors. For comparison, the growth was studied also on ZrO2 films and SiO2/Si surfaces. Deposition temperature was 325 °C. Using rather short but intense air pulses, smooth and uniform Ru films were deposited on SrTiO3. The films were crystallized at early stages of the growth. The nucleation density and rate on SrTiO3 were notably lower compared to that on ZrO2 and SiO2, but the physical qualities including the film conductivity were considerably enhanced after reaching Ru film thickness around 10 nm.

Keywords: ATOMIC LAYER DEPOSITION; IMAGING; NUCLEATION; RUTHENIUM

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.5045

Publication date: September 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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