Low Temperature SiC Film Deposition Using Trichlorosilane Gas and Monomethylsilane Gas
Abstract:In order to produce silicon carbide thin film through the process entirely at low temperatures, silicon carbide chemical vapor deposition on a silicon wafer surface was performed using trichlorosilane gas and monomethylsilane gas. First, the silicon thin film was formed using trichlorosilane gas at 800 °C and was cooled to room temperature in ambient hydrogen, in order to produce hydrogen-terminated silicon surface. Next, monomethylsilane gas was introduced at room temperature to produce silicon carbide thin film. The mirror-like appearance of the film obtained by this process was maintained after the exposure to hydrogen chloride gas at 800 °C. Furthermore, very thin Si–C layer was detected at the surface by means of the time-of-flight secondary ion mass spectrometry. Thus, the silicon carbide thin film was concluded to be formed through the process at temperatures below 800 °C.
Document Type: Research Article
Publication date: September 1, 2011
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