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Transient Stages in the Chemical Vapor Deposition of Silicon Carbide

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Transient CVD experiments were simulated by varying continuously the deposition temperature or the initial gas flow rates (Q MTS or Q H2). Their consequences on the physicochemical properties of the coatings have been first examined. The adhesion of SiC/SiC bilayers containing these "transient interphases" (ϕ Tr) was investigated by scratch testing. For transient stages resulting from a decrease of Q MTS or T, free silicon can be co-deposited in proportions depending on α = Q H2/Q MTS, T and P. This phenomenon is related to the high reactivity of the Si bearing species and is activated by high T and P and low α values. In this case, the continuous covalent bonding through the Sirich interphases preserves the adhesion between the two SiC layers. Transient stages resulting from a decrease of Q H2 lead first to larger and columnar SiC grains and finally to the deposition of anisotropic carbon, due to the formation of unsaturated hydrocarbons in the gas phase. The interphases with the highest carbon concentrations and thicknesses lead to delamination and local chipping of the outer SiC layer. The poor shear strength of these continuous and anisotropic layers is detrimental to the adherence of the bilayers.
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Document Type: Research Article

Publication date: 2011-09-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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