Aerosol Assisted Chemical Vapour Deposition Control Parameters for Selective Deposition of Tungsten Oxide Nanostructures

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Tungsten oxide films were deposited via Aerosol Assisted Chemical Vapour Deposition (AACVD) from the single-source precursor W(OPh)6. Film morphology and optimum deposition temperatures for formation of quasi-one-dimensional structures is influenced by the solvent 'carrier' used for deposition of the films with bulk porous films and nanostructured needles, hollow tubes and fibres obtained dependent on the solvent used and the deposition temperature. This influence of solvent could be exploited for the synthesis of other nanomaterials, and so provide a new and versatile route to develop and integrate nanostructured materials for device applications.


Document Type: Research Article


Publication date: September 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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