Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates
Abstract:High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 °C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si–H peak position of 2180 cm−1 in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 °C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.
Document Type: Research Article
Publication date: 2011-09-01
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