Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates
Abstract:Non-crystalline GeO2 films remote were plasma deposited at 300 °C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2–He mixtures as the O precursor. Films annealed at 400 °C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5–6 eV mid-gap absorption associated with formation of GeO x suboxide bonding, x < 2. These films were stable in normal laboratory ambients with no evidence for reaction with atmospheric water. Films deposited on Ge and annealed at 600 °C and 700 °C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.
Keywords: 2ND DERIVATIVE X-RAY ABSORPTION SPECTROSCOPY; POST-DEPOSITION ANNEALING; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REMOTE PLASMA-ASSISTED NITRIDATION; REMOTE PLASMA-ASSISTED OXIDE; WET CHEMICAL CLEANING; X-RAY ABSORPTION SPECTROSCOPY
Document Type: Research Article
Publication date: September 1, 2011
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