Authors: Ryu, Ju Tae; You, Joo Hyung; Yoo, Keon-Ho; Kim, Tae Whan

Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 8, August 2011 , pp. 7512-7515(4)

Publisher: American Scientific Publishers

Abstract:

NAND silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with double gates fabricated on silicon-on-insulator (SOI) substrates were proposed. The current-voltage characteristics related to the programming operation of the designed nanoscale NAND SONOS flash memory devices on a SOI substrate and on the conventional bulk-Si substrate were simulated and compared in order to investigate device characteristics of the scaled-down memory devices. The simulation results showed that the short channel effect and the subthreshod leakage current for the memory device with a large spacer length were lower than that of the memory device with a small spacer length due to increase of the effective channel length. The device performance of the memory device utilizing the SOI substrate exhibited a smaller subthreshold swing and a larger drain current level in comparison with those on the bulk-Si substrate. These improved electrical characteristices for the SOI devices could be explained by comparing the electric field distribution in a channel region for both devices.

Keywords: SONOS; SILICON-ON-INSULATOR; NAND; FLASH MEMORY

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2011.4844

Publication date: 2011-08-01

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• Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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