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Fabrication of 380 nm Ultra Violet Light Emitting Diodes on Nano-Patterned n-type GaN Substrate

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380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO2) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO2 nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO2 nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO2 nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4816

Publication date: August 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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