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Growth Behavior of Iridium on Si Substrates Prepared by Plasma Enhanced Atomic Layer Deposition

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Growth behavior of iridium (Ir) thin film on Si substrates prepared by plasma enhanced atomic layer deposition (PEALD) was systematically studied. Ir(EtCp)(COD) and oxygen was employed as a precursor and reactant, respectively. To obtain optimal conditions for depositing nanometer scale Ir thin film, deposition temperature, cycle dependence and precursor feeding time dependence were studied. Uniform 12 nm thick Ir layer with sharp interface was grown at the temperature range of 330∼360 °C at the fixed deposition cycles of 300. The grown Ir film showed linear properties as a function of deposition cycles which is a typical self-limiting characteristic of ALD. The XRD patterns revealed that IrO x was not formed due to relatively low partial pressure of oxygen. The optimal conditions obtained for 12 nm thick Ir thin film were 330 °C of deposition temperature, 300 deposition cycles, and 10 sec of precursor feeding time.
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Keywords: ALD; DEPOSITION TEMPERATURE; GROWTH BEHAVIOR; INCUBATION TIME; IR

Document Type: Research Article

Publication date: 2011-08-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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