Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 × 10−3 Ω·cm. In our experimental range, the optimized carrier concentration of 3.71 × 1018 cm−3 was prepared at the Ga/[O+Sn] mole ratio of 0.35.
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Document Type: Research Article
Publication date: 2011-08-01
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