Carrier Dynamics and Activation Energy of Cd x Zn1−x Te/ZnTe Quantum Dots on GaAs and Si Substrates
Abstract:We have investigated the carrier dynamics and activation energy of Cd x Zn1−x Te/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.
Document Type: Research Article
Publication date: August 1, 2011
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites