Controlled Growth of Related Defects on Oxide Nanowires

Authors: Lim, Taekyung; Kim, Sungha; Ju, Sanghyun

Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 8, August 2011 , pp. 7022-7026(5)

Publisher: American Scientific Publishers

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Abstract:

This study analyzed correlations between semiconducting properties and defects in oxide nanowires by changing the growth temperature and adding a reducing agent. Oxide nanowires each showed different emission spectra and semiconducting properties depending on growth factors caused by structural/intrinsic defects on the surface of the oxide nanowires. In particular, the substrate temperature played a key role in controlling defects during nanowire growth, and defects were reduced more effectively by adding a reducing agent to the source material. Oxide nanowires with reduced defects showed transistor characteristics with an on-current 2.5 times higher and a mobility 3 times higher than as-grown nanowires.

Keywords: OXIDE NANOWIRE; DEFECT CONTROL; TRANSISTOR; REDUCING AGENT

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2011.4222

Publication date: 2011-08-01

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Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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