Environmentally Stable Flexible Metal-Insulator-Metal Capacitors Using Zirconium-Silicate and Hafnium-Silicate Thin Film Composite Materials as Gate Dielectrics

$113.00 plus tax (Refund Policy)

Buy Article:

Abstract:

Fully flexible metal-insulator-metal (MIM) capacitors fabricated on 25 μm thin polyimide (PI) substrates via the surface sol–gel process using 10-nm-thick zirconium-silicate (ZrSi x O y ) and hafniumsilicate (HfSi m O n ) films as gate dielectrics. The surface morphology of the ZrSi x O y and HfSi m O n films were investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free surface growth had occurred on the PI. Both the films treated with oxygen (O2) plasma and annealing (ca. 250 °C) consisted of amorphous phase; confirmed by X-ray diffraction. We employed X-ray photoelectron spectroscopy (XPS) at high resolution to examine the chemical composition of the films subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy revealed the O2 plasma-pretreatment followed by annealing was the most effective process to the surface oxidation at relatively low-temperature, for further passivate the grease traps and making dielectric films thermally stable. The ZrSi x O y and HfSi m O n films in sandwich-like MIM configuration on the PI substrates exhibited the low leakage current densities of 7.1 × 10−9 and 8.4 × 10−9 A/cm2 at applied electric field of 10 MV/cm and maximum capacitance densities of 7.5 and 5.3 fF/μm2 at 1 MHz, respectively. In addition, the ZrSi x O y and HfSi m O n films in MIM capacitors showed the estimated dielectric constants of 8.2 and 6.0, respectively. Prior to use of flexible MIM capacitors in advanced flexible electronic devices; the reliability test was studied by applying day-dependent leakage current density measurements up to 30 days. These films of silicate-surfactant mesostructured materials have special interest to be used as gate dielectrics in future for flexible metal-oxide-semiconductor devices.

Keywords: FLEXIBLE SUBSTRATE; HAFNIUM-SILICATE; MIM CAPACITOR; SOL-GEL SPINS COATING; ZIRCONIUM-SILICATE

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.4247

Publication date: August 1, 2011

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • ingentaconnect is not responsible for the content or availability of external websites
Related content

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more