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Charge Storage Characteristics of Silicon Nanoclusters in Silicon Nitride Matrix Grown by Laser Assisted Chemical Vapor Deposition Method

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The capacitance–voltage (C–V) and charge retention characteristics of the metal-insulator-semiconductor (MIS) structure, in which the insulator layer was composed of silicon nanocluster-embedded silicon nitride, were studied. The memory effect of this MIS structure was dominantly attributed to the charge storage in the silicon nanoclusters. The relation between the flatband voltage shift and the amount of charges stored in the nanocluster-embedded insulator layer was discussed. The capacitance–time (C–t) relation of MIS structures, conventionally used to follow the discharge process, was further analyzed, indicating that care should be taken in the C–t measurement for obtaining correct discharging behavior. Then the charge retention characteristics of the fabricated MIS structures under various charging conditions were derived by the capacitance–time (C–t) measurement. The results showed that the devices, charged for a longer time or under a lower charging voltage, discharge slower. The observed charge retention behaviors can be reasonably attributed to the spatial distribution of silicon nanoclusters in the silicon nitride layer and the dispersion of the nanocluster sizes


Document Type: Research Article


Publication date: August 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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