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Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: A Transmission Electron Microscopy Study

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Abstract:

We use transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) techniques to confirm and analyze the interfacial misfit (IMF) and non-IMF growth modes for GaSb epilayers on GaAs substrates. Under optimized IMF growth conditions, only pure 90 dislocations are generated along both [110] and [1-10] directions and located exactly at the epi-substrate interface, which leads to very low density of misfit dislocations propagating from the GaSb/GaAs interface along the growth direction, compared to the non-IMF growth condition. The mechanism of defect annihilation indicates that this IMF mergence process happens without formation of threading dislocations into the GaSb epilayer, which is a completely relaxed growth mode with extremely low defect density. Based on scanning several sets of wafer surfaces, plan-view TEM confirms that the misfit defect densities are estimated to be ∼5 × 105 cm–2 for IMF growth mode and ∼109 cm–2 for non-IMF growth mode.

Keywords: EXTREME LATTICE MISMATCH; GALLIUM ANTIMONIDE; GALLIUM ARSENIDE; HETEROEPITAXY; INTERFACIAL MISFIT ARRAY; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2011.4111

Publication date: 2011-06-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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