Skip to main content

Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: A Transmission Electron Microscopy Study

Buy Article:

Your trusted access to this article has expired.

$105.00 plus tax (Refund Policy)

We use transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) techniques to confirm and analyze the interfacial misfit (IMF) and non-IMF growth modes for GaSb epilayers on GaAs substrates. Under optimized IMF growth conditions, only pure 90 dislocations are generated along both [110] and [1-10] directions and located exactly at the epi-substrate interface, which leads to very low density of misfit dislocations propagating from the GaSb/GaAs interface along the growth direction, compared to the non-IMF growth condition. The mechanism of defect annihilation indicates that this IMF mergence process happens without formation of threading dislocations into the GaSb epilayer, which is a completely relaxed growth mode with extremely low defect density. Based on scanning several sets of wafer surfaces, plan-view TEM confirms that the misfit defect densities are estimated to be ∼5 × 105 cm–2 for IMF growth mode and ∼109 cm–2 for non-IMF growth mode.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: 01 June 2011

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more