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Well-Crystalline ZnO Nanowire Based Field Effect Transistors (FETs)

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Well-crystalline ZnO nanowires were grown on Si(100) via non-catalytic thermal evaporation process using metallic zinc powder in presence of oxygen. The detailed morphological characterizations by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) confirmed that the synthesized products are nanowires with the typical diameter and lengths of ∼55±5 nm and several micrometers, respectively and are grown in high density over the silicon substrate. The detailed structural characterizations by high-resolution TEM and X-ray diffraction confirmed that the synthesized nanowires are well-crystalline and possessing wurtzite hexagonal phase. The presence of Raman-active optical-phonon E high 2 mode at 437 cm–1 in the Raman-scattering spectrum confirms good crystal quality for the as-grown ZnO nanowires. The electrical transport properties of the as-grown nanowires were explored by fabricating single nanowire based field effect transistors (FETs). The fabricated single ZnO nanowire based FET exhibits carrier concentration and electron mobility of ∼7.49 × 1017 cm–3 and ∼8.42 cm2V–1s–1, respectively.
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Document Type: Research Article

Publication date: 2011-06-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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