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Fabrication and Characteristics of Vertical Type Organic Light Emitting Transistor Using Novel Blue Host Material

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Vertical type organic light emitting transistor can perform as electroluminescence device as well as driving transistor. As the light emitting transistor containing vertical deposited configuration can control its own luminescence intensity, the device circuit can be simplified. In the present work, we have fabricated vertical type organic light emitting transistors consisting of Al(source)/C60/Al(gate)/C60/Bphen/TAT:FIrpic/CuPc/ITO(drain)/glass(substrate). TAT(9,10-bis(3″,5″-diphenylbiphenyl-4′-yl)anthracene) and FIrpic were used as blue host material and phosphorescent dopant material, respectively. Relatively high radiance and on-off ratio were observed in the device using LiAl metal as source and gate electrodes.
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Keywords: C60; FIRPIC PHOSPHORESCENT DOPANT; ON-OFF RATIO; RADIANCE; TAT HOST MATERIAL; VERTICAL TYPE ORGANIC LIGHT EMITTING TRANSISTOR

Document Type: Research Article

Publication date: 2011-05-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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