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Nonvolatile Write-Once-Read-Many Times Memory Devices Based on the Composites of Poly(4-vinylphenol)/Vulcan XC-72

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Abstract:

We fabricated write-once-read-many times (WORM) type organic memory devices in 8 × 8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (ION/IOFF∼106). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.

Keywords: CROSS-BAR ARCHITECTURE; ORGANIC ELECTRONICS; WRITE-ONCE-READ-MANY MEMORY

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3713

Publication date: May 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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