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Preparation of Poly(4-vinylphenol)/Titanium Dioxide Composite and Its Application as a Gate Dielectric for Organic Thin-Film Transistors

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Organic–inorganic composites can provide a unique feature combining superior dielectric properties of inorganic materials and solution processing capability of organic materials. In this study, poly(4-vinylphenol) (PVP) and titanium dioxide (TiO2) composite was prepared by mixing TiO2 nanoparticles in the PVP solution. In order to avoid severe gate-leakage currents in organic thin-film transistors (OTFTs) with such a composite gate dielectric layer, poly(oxyethylene)(20)-sorbitane monooleate was used as a surfactant for uniform dispersion of TiO2 particles. The dispersion stability of TiO2 nanoparticles in the composite solutions was confirmed by observing its sedimentation time in the composite solutions. The composite dielectric film, fabricated by means of simple spincoating, provided an enhanced dielectric property and contributed to reducing the threshold voltage of OTFT, without augmenting the gate-leakage current. These results demonstrate that the fabricated composite dielectric film is essentially eligible for low-voltage operating OTFTs.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3695

Publication date: May 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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