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Ion Beam Modification of Exchange Coupling to Fabricate Patterned Media

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Abstract:

For bit-patterned media, media with low remanent magnetization (Mr) and high Mr regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high Mr states using a medium that is at a low Mr state to start with. The low Mr state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga+ ions was used to create high Mr regions. AFM and MFM observations indicated that patterned regions of low and high Mr can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques.

Keywords: ANTIFERROMAGNETICALLY COUPLED MEDIA; FOCUSED ION BEAM; MAGNETIC MATERIALS; NANOFABRICATION; PATTERNING

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.2704

Publication date: March 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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