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Effect of Bi Doping on Magnetoresistance in La0.7−xBixSr0.3MnO3

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It is shown that upon increasing Bi content (x) in La0.7−xBixSr0.3MnO3, the ground state changes from ferromagnetic metal (x = 0) to charge ordered antiferromagnetic insulator (x > 0.4). The x = 0.3 compound shows unusual magnetic and magnetoresistive properties: it shows hysteresis in magnetization as a function of temperature, field-induced metamagnetic transition in the paramagnetic state, and nearly 100% magnetoresistance. The magnetoresistance as a function of composition at 0H = 5 T increases from 38% for x = 0.05 to 99.6% for x = 0.3 and then drops to 60% for x = 0.4. The unusual behavior of x = 0.3 composition is suggested to coexistence of short-range charge-ordered clusters and ferromagnetic domains. The field-induced melting of these charge-ordered clusters leads to large magnetoresistance effect.
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Document Type: Research Article

Publication date: 2011-03-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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