Promoted Growth of Bi Single-Crystalline Nanowires by Sidewall-Induced Compressive Stress in On-Film Formation of Nanowires

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To increase the density of Bi nanowires grown by our unique on-film formation of nanowires (OFF–ON) method, we introduced a technique for enhancing compressive stress, which is the driving force for the nanowire growth. The compressive stress could be controlled by modifying the substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a thermally oxidized Si(100) substrate. It was found that the density of Bi nanowires grown from Bi films in 100 × 100 m2-sized SiO2 patterns increases by a factor of seven over that from non-patterned substrates. Our results indicate that the density of Bi nanowires can be increased by enhanced compressive stress arising from a sidewall effect in the optimized pattern size and array.


Document Type: Research Article


Publication date: March 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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