The Growth and Characterization of ZnO/ZnTe Core–Shell Nanowires and the Electrical Properties of ZnO/ZnTe Core–Shell Nanowire Field Effect Transistor
Abstract:Vertically aligned ZnO/ZnTe core–shell nanowires were grown on a-plane sapphire substrate by using chemical vapor deposition with gold as catalyst for the growth of ZnO core and then followed by growing ZnTe shell using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscope (TEM) and Raman scattering indicate that the core–shell nanostructures have good crystalline quality. Three-dimensional fluorescence images obtained by using laser scanning confocal microscope demonstrate that the nanowires have good optical properties. The core–shell nanowire was then fabricated into single nanowire field effect transistor by standard e-beam photolithography. Electrical measurements reveals that the p-type ZnO/ZnTe FET device has a turn on voltage of −1.65 V and the hole mobility is 13.3 cm2/V s.
Document Type: Research Article
Publication date: March 1, 2011
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