Nitrogen Doped n-Type CdS Nanoribbons with Tunable Electrical and Photoelectrical Properties
Authors: Wu, Bo; Jiang, Yang; Wu, Di; Li, Shanying; Wang, Li; Yu, Yongqing; Wang, Zhuangbing; Jie, Jiansheng
Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 3, March 2011 , pp. 2003-2011(9)
Publisher: American Scientific Publishers
Abstract:Single-crystal nitrogen doped CdS nanoribbons (NRs) with wurtzite structure were synthesized in ammonia atmosphere via a thermal evaporation deposition route. X-ray diffraction patterns reveal a significant contraction of the lattice constants due to the incorporation of nitrogen. Temperature-varied photoluminescence spectra of CdS:N NRs exhibit spectral features near the band edge, which can be ascribed to free excition and neutral acceptor-bound excition emissions. Electrical and photoelectrical properties of the CdS:N NRs were systemically studied by constructing the field-effect transistors based on individual NRs. The conductivity of the NRs can be tuned by two orders of magnitude by controlling the N doping concentration. Moreover, by post-annealing, the device performance is remarkably improved, in particular, the mobility of the CdS:N NRs is increased by nearly three orders of magnitude from ∼10−1 to hundreds of cm2/Vs. Ion/Ioff ratio of the annealed device reaches over 104. Photoconductive properties of the CdS:N NRs were also studied. The doped NRs show high sensitivity to the light with energy larger than band-gap and the response amplitude and speed depend on the doping concentration.
Document Type: Research Article
Publication date: March 1, 2011
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