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Nitrogen Doped n-Type CdS Nanoribbons with Tunable Electrical and Photoelectrical Properties

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Single-crystal nitrogen doped CdS nanoribbons (NRs) with wurtzite structure were synthesized in ammonia atmosphere via a thermal evaporation deposition route. X-ray diffraction patterns reveal a significant contraction of the lattice constants due to the incorporation of nitrogen. Temperature-varied photoluminescence spectra of CdS:N NRs exhibit spectral features near the band edge, which can be ascribed to free excition and neutral acceptor-bound excition emissions. Electrical and photoelectrical properties of the CdS:N NRs were systemically studied by constructing the field-effect transistors based on individual NRs. The conductivity of the NRs can be tuned by two orders of magnitude by controlling the N doping concentration. Moreover, by post-annealing, the device performance is remarkably improved, in particular, the mobility of the CdS:N NRs is increased by nearly three orders of magnitude from ∼10−1 to hundreds of cm2/Vs. Ion/Ioff ratio of the annealed device reaches over 104. Photoconductive properties of the CdS:N NRs were also studied. The doped NRs show high sensitivity to the light with energy larger than band-gap and the response amplitude and speed depend on the doping concentration.


Document Type: Research Article


Publication date: March 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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