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Using Chemical-Mechanical Polishing for Planarizing a High- Nanocomposite Polyimide Insulator for Organic Thin Film Transistors Application

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To solve the large leakage current of the heavily blended nanocomposite (Polyimide and nano-TiO2 particles) gate dielectric film exhibiting a high-, the chemical-mechanical polishing (CMP) was adopted to flatten the surface of the PI–TiO2 nanocomposite film. An extremely high dielectric constant (≅13) of the nanocomposite with CMP treatment is obtained and its leakage current is comparable to that of the neat polyimide in our studies. An OTFT based on the nanocomposite gate dielectric exhibiting high capacitance and a smooth surface after CMP treatment shows very promising performance. Compared with the OTFT based on the neat polyimide gate dielectric, the threshold voltage is improved from −22 to −5 (V), the sub-threshold voltage is decreased from 3.44 to 0.50 (V/dec), the current on/off ratio is increased from 1.6 × 106 to 3.53 × 108, and the mobility is increased from 0.416 to 0.624 (cm2V−1s−1). Moreover, it is worth noting that the hysteresis effect of OTFT based the nanocomposite can be significantly reduced due to the few charge trapped in the interface when the nanocomposite dielectric surface was further polished by CMP treatment.


Document Type: Research Article


Publication date: March 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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