Characteristics and Fabrication of Vertical Type Organic Light Emitting Transistor Using Dimethyldicyanoquinonediimine (DMDCNQI) as a n-Type Active Layer and Light Emitting Polymer

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Abstract:

We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance Rc for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/Al (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.

Keywords: CONTACT RESISTANCE; DMDCNQI; MEH-PPV; RADIANCE; VERTICAL TYPE ORGANIC LIGHT EMITTING TRANSISTOR

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3374

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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