Antimony Selenide Phase-Change Nanowires for Memory Application
Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (∼10 MΩ) and low-resistance (∼1 kΩ) states which are attributed to amorphous and crystalline states, respectively.
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Document Type: Research Article
Publication date: 2011-02-01
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