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Visible Light-Responsive Titanium Dioxide Thin Film Prepared by Reactive Sputtering

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TiO2 is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of TiO2 films to visible spectrum range, we have made the impurity level within a band-gap of TiO2 thin film by introduction of oxygen vacancy. Oxygen-defected TiO2 photo-catalyst have prepared by reactive sputtering with the partial pressure of Ar:O2 = 76.7:23.3∼98.5:1.5 ratios. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is 2.9%. And the photocatalytic activity was realized at 400 nm wavelength.


Document Type: Research Article


Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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