Optimization of the Number of Quantum Well Pairs for High-Brightness AlGaInP-Based Light Emitting Diodes

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We investigated high-brightness light emitting diodes (LEDs) appropriate for general lighting applications in terms of their temperature dependent photoluminescence characteristics and device performance according to the change of quantum well pairs (QWs). As the number of QWs was increased from 2 to 35 pairs, radiative recombination efficiency and device performances significantly improved, due to the suppression of carrier overflow by decreasing the carrier density in the active region and shortening the carrier transfer time from barrier to well. At a further increase in the number of QWs to 50 pairs, however, the optical and device performances started to degrade because of the increase in internal loss in the active region, such as the well volume itself acting as light absorbing layer and due to the aluminum oxide complexes in the barrier.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3388

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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