Fabrication and Characteristics of Submicron Stacked-Junctions on Thin Graphite Flakes
We report on the fabrication and transport characteristics of submicron-size stacks along c-axis of thin graphite flakes. The stacks were fabricated using a three-dimensional focused-ion-beam (FIB) etching technique. The stack with in-plane area A of >0.5 m2 showed nonlinear concave-like I–V characteristics even at 300 K; however the stack with A of > 0.5 m2 were shown an ohmic-like I–V characteristic at 300 K for both low and high-current biasing. It turned into nonlinear characteristics when the temperature goes down. The in-plane area dependence of stack capacitance were discussed and the observed capacitance of stack with A of 0.5 m2 is smaller than the capacitance of stack with A of 1 m2 which causes the nonlinear I–V characteristics in stack with A of 0.5 m2 even at 300 K.
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Document Type: Research Article
Publication date: 2011-02-01
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