Atomic Ordering and Structural Determination of AlGaN/AlN/Si(111) Thin Films Using Anomalous X-ray Scattering
The atomic structure and atomic ordering of AlGaN/AlN/Si(111) thin films were studied using regular X-ray diffraction (XRD) and anomalous X-ray scattering (AXS). From regular XRD, both the Al composition and strain status of the AlGaN films are determined. AXS spectra were obtained near Ga K absorption edge at both the fundamental (0002) Bragg peak and non-vanishing forbidden (0001) peak. From this (0001) Bragg peak, long range atomic ordering with 2 bilayer periodicity is confirmed and the order parameter, S is determined from the integrated intensity ratio that is maximized upto 0.08 near x ≈ 0.5. The AXS near forbidden peak can be an effective method to reveal the atomic ordering of thin films.
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Document Type: Research Article
Publication date: 2011-02-01
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