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Atomic Ordering and Structural Determination of AlGaN/AlN/Si(111) Thin Films Using Anomalous X-ray Scattering

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The atomic structure and atomic ordering of AlGaN/AlN/Si(111) thin films were studied using regular X-ray diffraction (XRD) and anomalous X-ray scattering (AXS). From regular XRD, both the Al composition and strain status of the AlGaN films are determined. AXS spectra were obtained near Ga K absorption edge at both the fundamental (0002) Bragg peak and non-vanishing forbidden (0001) peak. From this (0001) Bragg peak, long range atomic ordering with 2 bilayer periodicity is confirmed and the order parameter, S is determined from the integrated intensity ratio that is maximized upto 0.08 near x ≈ 0.5. The AXS near forbidden peak can be an effective method to reveal the atomic ordering of thin films.
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Keywords: ALGAN; ANOMALOUS X-RAY SCATTERING; ATOMIC ORDERING; ORDER PARAMETER

Document Type: Research Article

Publication date: 2011-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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