Authors: Jeong, Chaehwan; Na, Hyeon Sik; Lee, Suk Ho

Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 2, February 2011 , pp. 1350-1353(4)

Publisher: American Scientific Publishers

Abstract:

The polycrystalline silicon (poly-Si) thin films were prepared by aluminum induced crystallization. Aluminum (Al) and amorphous silicon (a-Si) layers were deposited using DC sputtering and plasma enhanced chemical vapor deposition method, respectively. For the whole process Al properties of bi-layers can be one of the important factors. In this paper we investigated the structural and electrical properties of poly-crystalline Si thin films with a variation of Al thickness through simple annealing process. All samples showed the polycrystalline phase corresponding to (111), (311) and (400) orientation. Process time, defined as the time required to reach 95% of crystalline fraction, was within 60 min and Al(200 nm)/a-Si(400 nm) structure of bi-layer showed the fast response for the poly-Si films. The conditions with a variation of Al thickness were executed in preparing the continuous poly-Si films for solar cell application.

Keywords: ALUMINUM-INDUCED CRYSTALLIZATION; LAYER EXCHANGE; POLYCRYSTALLINE SILICON; ALUMINUM; AMORPHOUS SILICON; THIN-FILMS

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2011.3397

Publication date: 2011-02-01

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