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Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure

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Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3373

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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