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Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma

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Using a SiH4–N2 plasma, silicon nitride films were deposited at room temperature. The impact of source power ranging from 500 to 900 W and ion energy are investigated. The film properties examined include a deposition rate, a refractive index, and a surface roughness. Ion energy diagnostics was conducted to explore the relationships between ion energy and film properties. A variation in ion energy with source power was quite complex. By contrast, a decrease in ion energy flux was observed for a decrease in the source power. An increase in the deposition rate with the decrease in source power was attributed to enhanced ion energy. The refractive index strongly correlated with low ion energy flux. A decrease in surface roughness in the range of 500–700 W was related to larger ion energy. The deposition rate, refractive index, and surface roughness were varied in the range of 0.27–0.35 nm/sec, 1.690–1.739, and 6.7–52.5 nm, respectively.
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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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