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Synthesis of Cobalt-Based Nanocrystal Layer in Silicon Dioxide for Nonvolatile Memory Applications

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Cobalt silicide (CoSi) nanocrystal (NC) layer distributed within narrow spatial region is synthesized by thermal annealing of a sandwich structure comprised of a thin cobalt (Co) film sandwiched between two silicon-rich oxide (SiOx) layers. It is shown that the size of the CoSi NCs can be controlled by varying the Co film thickness, an increase in the size with increasing thickness. Capacitance–voltage (CV) measurements on a test metal/oxide/semiconductor (MOS) structure with floating gate based on CoSi NCs of 3.8 nm in diameter and 1.4×1012 cm2 in density are shown to have CV characteristics suitable for nonvolatile memory applications, including a CV memory window of about 9.5 V for sweep voltages between −15 V and +8, a retention time >108 s, and an endurance >106 program/erase cycles.
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Document Type: Research Article

Publication date: 2011-02-01

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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