CNT Manipulation: Inserting a Carbonaceous Dielectric Layer Beneath Using Electron Beam Induced Deposition
Electron beam induced carbonaceous deposition has been carried out in the presence of water vapor at 0.4 torr pressure amidst residual hydrocarbons present in the SEM chamber. When performed at a CNT location on a Si substrate with low e beam energy (10 kV), the deposition was taking place beneath the CNT. While higher beam energy (25 kV) causing the deposition on the top surface of the CNT, in agreement with the earlier reports. The insertion of dielectric carbonaceous layer beneath the CNT allowed us to measure the I–V data along the length of the nanotube using CAFM.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 2011-02-01
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites