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CNT Manipulation: Inserting a Carbonaceous Dielectric Layer Beneath Using Electron Beam Induced Deposition

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Abstract:

Electron beam induced carbonaceous deposition has been carried out in the presence of water vapor at 0.4 torr pressure amidst residual hydrocarbons present in the SEM chamber. When performed at a CNT location on a Si substrate with low e beam energy (10 kV), the deposition was taking place beneath the CNT. While higher beam energy (25 kV) causing the deposition on the top surface of the CNT, in agreement with the earlier reports. The insertion of dielectric carbonaceous layer beneath the CNT allowed us to measure the IV data along the length of the nanotube using CAFM.

Keywords: CARBONACEOUS DEPOSITION; CNT CIRCUITS; CONDUCTING AFM; ELECTRON BEAM INDUCED DEPOSITION; ELECTRON BEAM LITHOGRAPHY

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3112

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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