Authors: Cho, Young-Je; Kim, Hyunho; Park, Kyoung-Yun; Lee, Jaegab; Bobade, Santosh M.; Wu, Fu-Chung; Choi, Duck-Kyun

Source: Journal of Nanoscience and Nanotechnology, Volume 11, Number 1, January 2011 , pp. 787-790(4)

Publisher: American Scientific Publishers

Abstract:

Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process. After a-IGZO film deposition on the surface of a SiO₂-layered Si wafer, the wafer was illuminated with UV light; sources and drains were then patterned using n-octadecyltrichlorosilane (OTS) molecules by a printing method. Due to the low surface energy of OTS, cobalt was selectively deposited on the OTS-free a-IGZO surface. The selective deposition of cobalt electrodes was successful, as confirmed by an optical microscope. The a-IZGO TFT fabricated using the SAM process exhibited good transistor performance: electric field mobility (μ_FE), threshold voltage (V_th), subthreshold slope (SS) and on/off ratio were 2.1 cm²/Vs, 2.4 V, 0.35 V/dec and 2.9 × 10⁶, respectively.

Keywords: OXIDE TFT; SELF-ASSEMBLED MONOLAYER MICRO-CONTACT PRINTING; IGZO

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jnn.2011.3158

Publication date: 2011-01-01

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