Variations in the Memory Capability of Nonvolatile Memory Devices Fabricated Using Hybrid Composites of InP Nanoparticles and a Polystyrene Layer Due to the Scale-Down
InP nanoparticles were formed using a solution method, and the InP nanoparticles that were embedded in a polystyrene (PS) layer were formed using the spin-coating method. The transmission electron microscopy images showed that the InP nanoparticles were randomly distributed in the PS layer. The measured capacitance–voltage (C–V) of the Al/InP nanoparticles embedded in the PS layer/PS/p-Si(100) device at 300 K showed a clockwise hysteresis of the C–V curve. Based on the C–V results, the origin of variations in the memory storage of nonvolatile memory devices that were fabricated using InP nanoparticles embedded in a PS layer due to the scale-down was described.
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Document Type: Research Article
Publication date: 01 January 2011
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