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Nonvolatile Memory Characteristics of WSi2 Nanocrystals Embedded in SiO2 Dielectrics

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Abstract:

A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 × 1012 cm−2, respectively. The flat-band voltage shift due to the carrier charging effect of WSi2 nanocrystals were measured up to 5.9 V when the gate voltage sweep in the range of ±9 V. The memory window was decreased from 3.7 V to 1.9 V after 1 h and remained about 3.7 V after 105 programming/erasing cycles. These results show that there is a possibility for the WSi2 nanocrystals to be applied to nonvolatile memory devices.

Keywords: NANO-FLOATING GATE MEMORY; NANOCRYSTALS; NONVOLATILE MEMORY; WSI2

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jnn.2011.3165

Publication date: January 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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