Aluminum Oxide Formation at Al/La1−xSrxMnO3 Interface: A Computational Study for Resistance Random Access Memory Applications
Abstract:Resistance random access memory (ReRAM) is emerging as a next-generation nonvolatile memory. One of the most promising materials for the ReRAM application is a composite of a reactive metal [such as aluminum (Al)] and a mixed-valance manganite [such as La1−xCaxMnO3 (LCMO) and La1−xSrxMnO3 (LSMO)]. One of the current hypotheses regarding the origin of the resistive switching of such systems is a voltage-controlled reversible formation of a high-resistance aluminum oxide (AlOx) layer at the Al/LC(S)MO interface through oxygen migration from LC(S)MO. To validate this hypothesis, quantum mechanics (density functional theory) calculations were carried out on an atomistic model of the resistive-switching phenomena at the Al/LSMO interface (the composite systems of Al/LSMO and AlOx/LSMO) as well as on the component materials such as Al, AlOx, LaMnO3, LaMnO3−, La1−xSrxMnO3, and La1−xSrxMnO3−. The changes in the structure, energy, and electronic structure of these systems during the oxygen vacancy formation in LSMO, the oxygen migration through the Al/LSMO interface, and the AlOx formation were investigated.
Document Type: Research Article
Publication date: 2011-01-01
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