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Deformation Characteristics of an Organic Thin Film Transistor

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Abstract:

An organic thin film transistor (OTFT) on a flexible substrate with electroplated electrodes has many advantages in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical characteristics of an OTFT with various compressive stress conditions using COMSOL. An analysis model, which was limited to channel, source, and drain, was used to investigate deformation and internal stress concentrations. The channel length is 40 μm and the OTFT structure is a top-contact structure. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. The deformation characteristics of the fabricated OTFT were predicted in terms of strain and internal stress.

Keywords: NEUTRAL MECHANICAL PLANE; OTFT; RADIUS OF CURVATURE

Document Type: Research Article

DOI: https://doi.org/10.1166/jnn.2011.3259

Publication date: 2011-01-01

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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